PART |
Description |
Maker |
DP030S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
DP100 |
Extremely low collector-to-emitter saturation voltage PNP Silicon Transistor
|
KODENSHI KOREA CORP. AUK corp
|
2SD874A |
Large collector power dissipation PC. Low collector-emitter saturation voltage VCE(sat).
|
TY Semiconductor Co., Ltd
|
BSP60 BSP62 Q62702-P1166 Q62702-P1168 BSP60BSP62 B |
From old datasheet system PNP Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon
|
PMF370XN |
N-channel mTrenchMOS extremely low level FET N-channel uTrenchmos (tm) extremely low level FET
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors Philips Semiconductors
|
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
MJE210 |
PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
ASM3P2872A ASM3P2872AF-06OR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution From old datasheet system The el-EMI-nator? Series for Low-Power
|
Alliance Semiconductor ALSC
|
STY16NA90 6004 |
N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET From old datasheet system N - CHANNEL 900V - 0.5 - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|